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EIC1314-8
ISSUED 2/06/2009
13.75-14.5 GHz 8-Watt Internally Matched Power FET
FEATURES
* * * * * * 13.75- 14.5GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.0 dBm Output Power at 1dB Compression 6.0 dB Power Gain at 1dB Compression 24% Power Added Efficiency Hermetic Metal Flange Package
EIC1314-8
ELECTRICAL CHARACTERISTICS (Ta = 25C)
SYMBOL P1dB G1dB G PAE IMD3 Id1dB IDSS VP RTH PARAMETERS/TEST CONDITIONS1
Output Power at 1dB Compression f = 13.75-14.5GHz VDS = 10 V, IDSQ 2400mA Gain at 1dB Compression f = 13.75-14.5GHz VDS = 10 V, IDSQ 2400mA Gain Flatness f = 13.75-14.5GHz VDS = 10 V, IDSQ 2400mA Power Added Efficiency at 1dB Compression f = 13.75-14.5GHz VDS = 10 V, IDSQ 2400mA Output 3rd Order Intermodulation Distortion f = 10 MHz 2-Tone Test; Pout = 28.0 dBm S.C.L2 VDS = 10 V, IDSQ 65% IDSS f = 14.50 GHz Drain Current at 1dB Compression Saturated Drain Current Pinch-off Voltage Thermal Resistance3
2) S.C.L. = Single Carrier Level. 1,2
Caution! ESD sensitive device. MIN
38.5 5.0
TYP
39.0 6.0
MAX
UNITS
dBm dB
0.6 24 -44 -47 2500 4000 -2.5 3.5 2800 6000 -4.0 4.0
o
dB % dBc mA mA V C/W
f = 13.75-14.5GHz
VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 40 mA
Note: 1) Tested with 15 Ohm gate resistor.
3) Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING
SYMBOLS
PARAMETERS Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reverse Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation
ABSOLUTE1 15 -5 86.4mA -14.4mA 37 dBm 175 C -65 to +175 C 37.5W
o o
CONTINUOUS2 10V -4V 28.8mA -4.8mA @ 3dB Compression 175 C -65 to +175 oC 37.5W
o
Vds Vgs Igsf Igsr Pin Tch Tstg Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 4 Revised February 2009
EIC1314-8
ISSUED 2/06/2009
13.75-14.5 GHz 8-Watt Internally Matched Power FET
Output Power V.S Frequency
Gain @ 1dB Compression V.S Frequency
10 9
42
39 P1dB / dBm
8 7
36
Gain / dB
6 5 4 3 2 1
33
30 13.6
13.8
14
14.2
14.4
14.6
0 13.6
13.8
14
14.2
14.4
14.6
Frequency / GHz
Frequency / GHz
P1dB v.s Frequency
G1dB v.s Frequency
10 5 0
dB(S(1,2)) dB(S(2,1))
S(2,2) S(1,1)
-5 -10 -15 -20 -25 13.5 13.6 13.7 13.8 13.9 14.0 14.1 14.2 14.3 14.4 14.5 14.6 14.7
freq (13.55GHz to 14.70GHz)
freq, GHz
freq 13.55GHz 13.64GHz 13.73GHz 13.82GHz 13.90GHz 13.99GHz 14.08GHz 14.17GHz 14.26GHz 14.35GHz 14.43GHz 14.52GHz 14.61GHz 14.70GHz
S S(1,1) 0.318 / -99.635 0.280 / -110.611 0.243 / -122.815 0.209 / -135.832 0.175 / -149.745 0.146 / -167.110 0.120 / 172.763 0.102 / 149.063 0.093 / 122.419 0.093 / 94.109 0.099 / 67.353 0.112 / 44.513 0.130 / 24.077 0.149 / 7.110 S(1,2) 0.091 / 83.555 0.093 / 74.732 0.095 / 66.548 0.097 / 58.383 0.099 / 49.523 0.100 / 40.173 0.102 / 32.163 0.103 / 23.382 0.104 / 14.730 0.105 / 6.052 0.105 / -2.801 0.105 / -11.762 0.105 / -21.138 0.105 / -30.090 S(2,1) 2.127 / 105.940 2.158 / 97.551 2.187 / 89.114 2.221 / 80.625 2.245 / 71.874 2.257 / 63.452 2.272 / 54.877 2.285 / 46.163 2.289 / 37.466 2.294 / 28.755 2.295 / 20.041 2.286 / 11.332 2.282 / 2.498 2.270 / -6.260 S(2,2) 0.542 / 67.220 0.522 / 60.828 0.502 / 54.065 0.479 / 47.347 0.454 / 40.295 0.430 / 32.829 0.404 / 25.080 0.377 / 16.820 0.352 / 7.883 0.328 / -1.916 0.305 / -12.402 0.287 / -23.532 0.273 / -35.903 0.260 / -49.190
Typical S-Parameters (T= 25C, 50 system, de-embedded to edge of package) VDS = 10 V, IDSQ = 2400mA
Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 2 of 4 Revised February 2009
EIC1314-8
ISSUED 2/06/2009
13.75-14.5 GHz 8-Watt Internally Matched Power FET
Power Dissipation V.S Temperature
40 35
Total Power Dissipation / W
Pout [S.C.L.] (dBm)
THIRD-ORDER INTERCEPT POINT IP3
IP3 = Pout + IM3/2 f1 or f2
30 25 20 15 10 5 0 0 50 100 Temperature / C 150 200
Pout Pin IM3
IM3
f1 f2
(2f1-f2) f1 f2 (2f2-f1)
(2f2 - f1) or (2f1 - f2)
Pin [S.C.L.] (dBm)
IM3 v.s Output Power
f1=14.5 GHz, f2=14.49 GHz
-20 -30 -40
IM3 / dBc
-50 -60 -70 -80 13 16 19 22 Pout (S.C.L) / dBm 25 28 31
Typical IMD3 Data (T= 25C) VDS = 10 V, IDSQ 2400 mA
Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 3 of 4 Revised February 2009
EIC1314-8
ISSUED 2/06/2009
13.75-14.5 GHz 8-Watt Internally Matched Power FET
DISCLAIMER EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN. LIFE SUPPORT POLICY EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR, INC. AS HERE IN: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 4 of 4 Revised February 2009

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